Samsung Electronics has officially released the new Z-SSD that has been talked about for many years. The first product model, the 'SZ985', is the most advanced enterprise storage for supercomputing and AI analysis.
Not long after, Samsung announced its own Z-NAND flash memory and Z-SSD solid state drives, claiming to outperform the limits of existing NAND flash memories with faster speeds and lower latency.
Intel proud Proton is between a DRAM memory, NAND flash memory between non-volatile storage, Samsung Z-NAND is also somewhat similar, but the specific architecture and technical details have not been disclosed, and now the product release is still absent-minded.
SZ985 Z-SSD initial capacity only 240GB, 800GB , And the originally announced 1/2 / 4TB is far away, it should follow up in the follow-up, at the same time have up to 1.5GB LPDDR4 cache , Implying a large amount of redundancy, or finding a way to utilize large-capacity caches.
Performance is not published too comprehensive, just stressed Random read performance of up to 750,000 IOPS, significantly higher than the Intel Optane SSD P4800X 55 million IOPS, but random write only 170,000 IOPS, a full 77% slower than the opponent, apparently still a big problem can not be overcome.
Despite this, the SZ985 still meets the needs of write-intensive applications, Supports up to 30 full-time writes per day for up to five years (800P lifetime writes to 42PB), Comparable to Intel Optane.
In addition, SZ985's Write latency is 16 microseconds , But the read delay is not announced.
Samsung also said, Z-NAND cell read performance than its 3D TLC flash memory 10 times higher.
Master is not clear, look at the official map should also be Samsung's own.
Samsung did not release the SZ985 time-to-market and price, but it is worth mentioning that Samsung announced the second generation of Z-NAND last year, but the first generation technology is still used here.
