December 26, the reporter learned from the era of electric car era, led by the company '3600A / 4500V crimp IGBT and its key technologies' project, recently passed the identification of the results of the China Institute of Electronics Organizations through the implementation of the project, the company developed Out of the world's highest power rating of the insulated gate bipolar transistor (IGBT) It is reported that this is the first time in our country to achieve zero-break crimp IGBT technology.
Crimp-type IGBTs are the core devices in the field of flexible DC power transmission. The devices are similar in appearance to thyristors, but their power capacity is mainly achieved by connecting a plurality of 'subunit' components in parallel. The electrical connection between the chip and the electrodes is achieved by Pressure to achieve.Compared with the traditional welding IGBT module, this type of module has the advantages of large capacity, high reliability, failure short circuit mode.
Liu Guoyou, deputy chief engineer of China Times Electric Co., introduced the 3600A / 4500V crimp-type IGBT module, which is a device with the largest capacity, double-sided heat dissipation and long-term stable failure short circuit in the market. 'Into' a large-size U-shaped cell crimp-type chips, based on low-temperature nano-silver sintering chip strengthening, a large area square ceramic package parallel current-sharing package and many other core technologies, breaking the chip large-scale parallel pressure package Of the pressure equalization and current balancing of the technical problems, to achieve the double improvement of device characteristics and reliability of the large-capacity crimp-type IGBT module, has been adopted by a number of grid-level utility converter valve model demonstration test application validation, Up to production and engineering application requirements.
