Korea Institute of Science and Technology released the news that the hospital joint Yonsei University, two-dimensional two-dimensional tungsten diselenide tungsten single-chip and one-dimensional zinc oxide semiconductor nanowires mixed dimensional space double-layer structure, the development of the sensor can be perceived from the UV to near Infrared light photodiode device.
The findings are published in the international academic journal Advanced Functional Materials.
Low-dimensional space Nano-semiconductor devices in the next generation of semiconductor has broad application prospects, is the focus of research and development. The research team used two-dimensional components with strong optical response, high hole mobility characteristics of P-type semiconductor components.
One-dimensional zinc oxide nanowires is one of the best one-dimensional nano-semiconductors with high electron mobility and is expected to be used in high-performance N-type semiconductor devices. After one-dimensional two-dimensional mixing, a mixed-dimensional space Double-layer structure (PN type), developed a photodiode components.
The research team said that the study successfully achieved a two-dimensional image, the future is expected to be widely used in a new generation of image sensor components.
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