Phys.org reports that Long-Fei He and related researchers at Fudan University and the Institute of Microelectronics, Chinese Academy of Sciences, recently published a paper on the new type of memory in the new AIP Journal.
Because most of the existing memory technologies are too bulky to integrate on the display panel, researchers are constantly looking at new designs and materials in an effort to create storage devices that are equally well-behaved yet ultra-thin.
In this new study, researchers use a two-dimensional (MoS2) over-metallic material to create an atomic-scale semiconductor whose conductivity can be refined Adjust, and then form a memory with the high switching current ratio of the basic components.
In addition, the team also confirmed in tests that this type of memory has fast, large memory space and excellent storage, and researchers estimate that even at high temperatures of 85 ° C (185 ° F) Year, the storage space can still save about 60% of the original, which is still enough for practical application.
In the past, studies have confirmed that molybdenum disulfide has a photoresponsive effect, which means that some properties can be controlled by light. To understand the actual application, the team actually conducted relevant experiments. As a result, they found that when the light shines on the programmed Of the storage device, the stored data is completely erased, but at the same time using the voltage erase information can still be used.
Co-owner Hao Zhu said the team is currently investigating the large-scale integration of such storage components with programmable, programmable optical pulse wavelengths and timing, and researchers believe the future of such storage devices will be in the application of system-integrated panels Play an important role.