Especially in the past two years, the sustained price of memory continued to soar. Samsung, SK Hynix and Micron firmly hold the power of discourse in the few oligarchs, which highlights the need for autonomy.
Now, Ziguang finally created China's first independent PC DDR4 memory chips, DRAM particles completely own research and development.
From the online exposure of the picture, this memory is clear purple core (UnilC) logo, is a simple bare design, a single capacity of 4GB, the more specific specifications do not see the parameters too clear.
Xi'an Ziguang Quoc Semiconductor Co., Ltd. was developed on the basis of restructuring and reconstruction of the original German Qimonda Technology (Xi'an) Co., Ltd. in May 2009 and was established in Xi'an as the Infineon Technologies Memory Business Unit in 2003. Infineon's storage division was split into the market for Qimonda, Qimonda Technology (Xi'an) Co., Ltd. was also established and began operating as an independent company.
In 2009, Inspur Group acquired the original German Qimonda Technology (Xi'an) Co., Ltd., and restructured it and renamed it Xi'an China Semiconductor Co., Ltd. In 2015, Ziguang International Corp., a subsidiary of Ziguang Group, acquired Xian Wuxin Semiconductor Limited Company, and changed its name to Xi'an Ziguang Semiconductor Semiconductor Co., Ltd.
Xi'an Ziguang Guoxin core business is memory design and development, production and sales of private label memory products, as well as ASIC design and development services. At the same time also bear the national science and technology major projects' nuclear high base 'and the national high-tech development plan' 863 'And many other major areas of memory research projects and topics.
In January of this year, Ziguang Group announced that it will invest 200 billion yuan to build a semiconductor industrial base in Nanjing. Upon completion, Phase I will be the largest chip manufacturing plant in China, with a wafer output of 100,000 pieces per month.
Last July, Purple also participated in the investment in the Yangtze River storage, which plans a total investment of 160 billion yuan to create a home-made 3D NAND flash memory, but also set up a 500-person R & D team to tackle DRAM memory manufacturing technology.