Academician Wang Xi awarded Song Zhitang team awards and bonuses
Shanghai Institute of Microsystems, National 02 Deputy Director Wang Xi speech
Song Zhitang researcher for the related research report
Science Net December 22 Shanghai News (Xinhua Huang Xin) In order to encourage the majority of scientific and technological personnel into the main battlefield of science and technology innovation, promote academic prosperity and encourage the growth of science and technology personnel, the Chinese Academy of Sciences in Shanghai Microsystems held this afternoon, high-level article publishing report, recognition Song Zhitang's group of researchers in the high-speed, low-power new Sc-Sb-Te phase change memory material research major scientific discovery.It is reported that the Shanghai Institute of Microsystem and Information Technology joint SMIC Manufacturing Co., Ltd., choose to embed Type phase change memory (PCRAM) as the starting point, in the national key research and development project nanotechnology key special, national science and technology major project 'very large scale integrated circuit manufacturing equipment and complete sets of technology' (02 special), the National Natural Science Foundation of China, Chinese Academy of Sciences A type of strategic pilot science and technology projects, Shanghai's leading talent, the Shanghai Municipal Science and Technology Commission and other projects funded by more than ten years of research, in the storage material screening, memory chip design, PCRAM basic manufacturing technology made a series of important science and technology progress.
It is reported that the relevant research results with independent intellectual property rights (International Patent PCT / CN2016 / 096334, China Patent 201510697470.2.) November 9 this year, "Science" periodical entitled 'Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing' online Published this important research results and published in the journal on December 15. This is an important scholarly paper published in the Science and Technology Department of Shanghai Micro System and the first academic paper in the field of key core materials of advanced storage technology in China .
The report was presided over by Qi Ming, secretary of the party committee of Shanghai Micro-system Institute; Xie Xiaoming, deputy director read out the decision of Shanghai Microsystems on PCRAM project team. Academician of Chinese Academy of Sciences, Director of Shanghai Microsystem Institute, The team awards and bonuses.
Wang Xi said in his speech that under the leadership of Professor Song Zhitang, the PCRAM team deserves congratulations on the achievements made after nearly 15 years of hard work since 2002. He hopes scientists can go on and on Based on the achievement of greater achievements. Can face the world's scientific and technological frontier, facing the major national needs, facing the main battlefield of the national economy, helping innovation-driven, and strive to practice in the new era of Chinese Academy of Sciences policy, into the Shanghai Science and Innovation Center to make new Contributions.
The integrated circuit industry is a national strategic emerging industry in the 13th Five-Year Plan period.Memory is one of the most important technologies in integrated circuits and an important manifestation of the core competitiveness of the country.As a global manufacturing base of electronic products, memory self-sufficiency is still relatively Weakness: The monopoly of memory technologies and products by large foreign semiconductor companies such as Samsung and Intel abroad poses a significant threat to the development of information industry and information security in our country. It is imminent to develop a new type of semiconductor memory technology with our own intellectual property rights.
At present, the commonly used phase change memory material in the world is Ge-Sb-Te. In recent years, the development of integrated circuit technology has various performance indexes such as power consumption, life expectancy, size and endurance of memory chips Have put forward higher requirements, scientists from all over the world are stepping up research and development of storage materials.
Song Zhitang, a research team of the Shanghai Institute of Microsystem and Information Technology, CAS, made a major breakthrough in the research of new phase-change memory materials. Under the guidance of the autophase-transformed octahedral primitives and the face-centered cubic metastability theory, Octahedral lattice and electronic structure to match the research and development ideas to design a new type of phase change material to stabilize the octahedron as a nucleation center to reduce the randomness of amorphous nucleation phase transition material to achieve high-speed crystallization through the first The theoretical calculations and molecular dynamics simulation show that scandium and iridium (Sc, Y) are preferred as doping elements among many transitional elements, and they are tested by memory cell storage performance test, especially for high speed flash memory cell. The Sc-Sb-Te phase-change material with high speed, low power consumption, long life and high stability has been realized by the Sc-Sb-Te phase change memory device prepared by 0.13um CMOS process Picosecond high-speed reversible write-erase operation with a cycle life of more than 107. Compared with the conventional Ge-Sb-Te based phase change memory device, the operational power consumption is reduced by 90% and the data retention of ten years is comparable. By further optimizing Materials and miniature device Sc-Sb-Te-based PCRAM synthesis performance will be further enhanced.Research shows that Sc-Te stable octahedron as the core of the nucleation and growth is the main reason for high-speed, low power consumption; lattice and electronic structure match is long Life of the main reasons; stable octahedral restraint FCCHEX conversion is also one of the reasons for high-speed, low power consumption.
It is understood that the major discovery of Sc-Sb-Te phase change memory materials from the Shanghai Institute of Microsystem CAS's long-term research work in the phase-change memory accumulation.The research team also found that the international production of Ge-Sb- Te performance of the better new self-Ti-Sb-Te phase change memory materials; independent research and development with the international advanced level of double-channel isolation 4F2 high-density diode technology; developed China's first 8Mb PCRAM test chip; developed Of the 0.13umCMOS process-based printer with embedded PCRAM products have received the first 7.5 million orders; developed based on 40nm high-density diode technology, has the smallest unit size of the self-read memory has begun sampling; developed 40nm node PCRAM test chip unit yield up to 99.999% or more, and even without correction 4Mb, 64Mb PCRAM chip, is now available to customers in the advanced information system trial.
At the meeting, Song Zhitang, a team of fellow researchers, shared the research and development trends of phase change storage and the team's unswerving exploration of technological innovation and industrialization.
He said that these new phase change material performance, the physical solution to the memory low-power and high-speed erase problems, coupled with self-developed chip has been used in high-speed chip readout (US8947924), on Can form a new generation of the most advanced memory.If the high-density, three-dimensional memory chip to further verify the material for our breakthrough in foreign technology barriers, the development of independent intellectual property rights of memory chips of great value; to achieve our memory technology Leap-forward development, promoting the prosperity of China's information industry and safeguarding the information security in our country are of strategic importance.
Director of Information Science Department of NSFC Pan Qing, Director of Technical Science Department, Frontier Science and Education Bureau, Chinese Academy of Sciences Kong Minghui, Professor Zhang Pei, Peking University 02 Ma Zhenyu, Expert of State Key Science and Technology Management Office, Deputy Director Song Yang, Director Chen Ming, Shanghai IC R & D Center Chairman Zhao Yuhang, Director of Shanghai Nanocrystal Center Min Guoquan, Executive Vice President of Semiconductor Manufacturing International Corporation Zhou Meisheng, Wacker Road, and Shanghai Microsystem Center More cadres, scientific research backbone, graduate students attended the report.
Experts at the conference said that they persistently moved Song Zhitang and his team to adhere to the principle of "striving for success." Ten years of grinding their sword and looking forward to the team's unforgettable initial breakthrough in basic research while making progress in originality and major breakthroughs in the industrialization of scientific and technological achievements and serving The main battlefield for national economic construction has made even greater achievements.