Progress in Magnetic Doping of Two-Dimensional Semiconductor in Semiconductor

In recent years, two-dimensional van der Waals materials such as graphene, molybdenum disulfide and the like have been widely studied due to their unique structure, physical properties and photoelectric properties.In the field of two-dimensional materials, magnetic two-dimensional materials have richer physical images , And have important potential applications in the future spintronics, more and more people are concerned.Doping is an important means to realize two-dimensional semiconductor energy banding, if two-dimensional semiconductor materials doped with magnetic atoms, These materials may have magnetic properties while maintaining the original semiconductor optoelectronic properties.Recently, the research team headed by Wei Zhongming and Li Jingbo, supervisors of the Institute of Semiconductors for Semiconductors, Chinese Academy of Sciences, -SnS2) crystals have made new progress in the light, electricity and magnetism research.

Tin sulfide (SnS2) is a two-dimensional van der Waals material with excellent photoelectric properties and is one of the two-dimensional semiconductor materials with the fastest photoelectric response time reported so far.This material is non-toxic, environment-friendly, rich in content and easy to prepare. The research team obtained high-quality Fe-SnS2 single crystals with different doping concentrations by groWing the growth conditions by the conventional chemical vapor transport method and then obtained two-dimensional Fe-SnS2 nanosheets by mechanical stripping method.Search transmission electron microscopy STEM) results show that the Fe atoms are doping at the position of the Sn atoms and evenly distributed.According to the regulation of the growth conditions, combined with X-ray photoelectron spectroscopy (XPS) analysis, a series of different crystal, iron doped The miscellaneous concentrations were 2.1%, 1.5% and 1.1%, respectively. The field-effect transistor test of monolayer Fe0.021Sn0.979S2 showed that the material was n-type, the switching ratio was over 106 and the mobility was 8.15cm2V-1s-1. Degree of 206mAW-1, shows a good optoelectronic properties.

Single-chip magnetic test showed that SnS2 is diamagnetism, Fe0.021Sn0.979S2 and Fe0.015Sn0.985S2 have ferromagnetism, while Fe0.011Sn0.989S2 shows paramagnetism. The experiment measured Fe0.021Sn0.979S2 Curie The temperature is 31 K. When the temperature is 2K, the magnetic field can get different magnetic properties along the vertical c-axis and the parallel c-axis, ie, strong magnetic anisotropy. Theoretical calculations show that the magnetic properties of Fe-SnS2 are derived from Fe atoms and The antiferromagnetic coupling of adjacent S atoms, and the neighboring Fe atoms are ferromagnetically coupled, thus forming a long-range ferromagnetism in such a magnetic atom-doping material. This study shows that iron-doped SnS in the future nano There are potential applications in electronics, magnetism and optoelectronics.

Relevant research results published in Nature Communications research work by the Chinese Academy of Sciences 'Hundred Talents Program' and the National Natural Science Foundation of China outstanding youth science fund, the surface of the project funding.

Progress in Magnetic Doping of Two-Dimensional Semiconductor in Semiconductor