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1. Ziguang Spreadtrum won the annual 5G Innovative Enterprise Award;
Set micro-mesh news, all things closer to the tide of the Internet, and China's communications industry has gone through 2G to follow, 3G breakthrough, 4G synchronization, we determined in the coming 5G era, become the industry leader, not only In pursuit of industries and markets, we must also have our say in standards and technologies and enhance their international status.
As a leader in China Mobile's chip design, Zhanxun's Spreadtrum has always followed the national strategy and international timetable for 5G research and development.From the beginning of 2015, Spreadtrum already has a professional R & D team and has been innovating in 5G mobile chip technology all the way Leading, by the country and industry affirmed in the December 19, 2017 China Communications Industry Conference and the 12th China Communications Technology Annual Conference, Spreadtrum with its 5G technology innovation contribution, won the 2017 communications industry Jinzhu Award - 5G Innovative Enterprise Award.
Spreadtrum Beijing Wang Peng, general manager (third from right) came to accept the award
China Communications Industry Conference is sponsored by China Electronics and Information Industry Development Research Institute and Communications Industry Newspaper. This year, with the theme of "Innovation and Challenges of Dalian Connection and Pan-smart Intelligence", this year's conference invites industry experts to negotiate the future and welcome the era of Dalian Connect. In recognition of the products, people and businesses that contributed to the development of the ICT industry in 2017, the conference set up the Jinzizhu Communication Industry Prize. With 5G results, Spreadtrum stood out among the outstanding enterprises and won the award of 5G Innovative Enterprise of the Year.
5G when
Spreadtrum is currently at the leading position in 5G research and development. During the second phase of China 5G technology research and development validation organized by China IMT-2020 (5G) in September, Spreadtrum has successfully completed the interoperation with Huawei 5G prototype base station Docking Test (IODT). The successful docking demonstrates Spreadtrum's landmark achievement in accelerating 5G standardization and commercialization.
Spreadtrum 5G terminal prototype platform Piliot V2
In addition, Spreadtrum has implemented Pilot V2, the latest 5G terminal prototype platform that supports 5G flexible air interface design features a new terminal baseband / RF architecture, integrated multi-core processors, high-speed signal processing FPGA array, support for Sub-6GHz band, 8 * 8MIMO and Carrier aggregation, and multiple flexible reconfigurable capabilities to meet the verification requirements of high throughput, low latency and flexibility in 5G NR multi-scene scenarios and to provide a terminal prototype solution for 5G testing and verification.
5G future
Spreadtrum will continue to invest in 5G innovative technology research and development, will be the first to support the 3GPP R15 5G standard mobile chip in 2018. At the same time Spreadtrum will also strengthen cooperation with partners to promote China's 5G technology development and standards of simultaneous development, promotion Our country's international status in the field of global communications.
5G era has come, Spreadtrum innovation-driven continuous breakthrough in order to core craftsmanship for the sake of tempering forward. A 'core' era has come, Spreadtrum Ready.
2. powerful alliance, Xinhua three hand Ziguang Zhaoyi release new IM2210-NB module;
Set micro-network news, recently, the purple Xinhua Group III officially released the new IM2210-NB module.It is reported that this module by Zhaopin Rui provide chips, Xinhua three to provide technology research and product research capabilities in the different from the traditional Based on features such as ultra-low sleep power, low bandwidth, long battery life and wide coverage, the new IM2210-NB also has two extreme advantages: one is small size and the other is China Chip.
First of all, in the small size, the new NB module uses a very small product size, LCC package is 16 * 18 * 2.1mm. IM2210 NB-IoT module uses advanced highly integrated design, the RF, baseband integrated in a On the printed circuit board, wireless receiver, transmitter, baseband signal processing, audio signal processing and other functions are completed. The LCC PAD interface is adopted for the external application interface and the AT command is extended to realize the customized solution for users.
At the same time, the small size has two very obvious advantages: First, can be built into the tiny smart terminal products for smart meter reading, smart parking, smart buildings, smart home applications; the second is greatly saving the cloth Area, better applied to the entire industry.
Secondly, with respect to China's core, the new IM2210-NB module, jointly developed by Ziguang Zharui and Xinhua Sanqiang, is equipped with the H3C Oasis OS lightweight IoT operating system and seeks to create a comprehensive three-dimensional security defense system that focuses on chip security, Communications security, data security, system security and application security.The self-developed program to create communication module so that the real production of the country, from the bottom of the chip began to protect information security, promote the rapid development of Internet of Things industry, accelerate Internet of things Terminal intelligent.
It is noteworthy that the release of the new module IM2210-NB not only conforms to the call issued by the Ministry of Industry and Information Technology on the "Notice of the General Office of the Ministry of Industry and Information Technology on Promoting the Development of NB-IoT Construction", but also responds to the national construction IPv6 network policy, priority will be in the government, education, finance, Internet, radio and television, operator services industry customers, to meet the 'all things connected' era work together.
3. Semiconductor two-dimensional semiconductor magnetic doping research progress
In recent years, two-dimensional van der Waals materials such as graphene, molybdenum disulfide and the like have been widely studied due to their unique structure, physical properties and photoelectric properties.In the field of two-dimensional materials, magnetic two-dimensional materials have richer physical images , And have important potential applications in future spintronics, more and more people are concerned.Doping is an important means to realize two-dimensional semiconductor energy banding, if two-dimensional semiconductor materials doped with magnetic atoms, These materials may have magnetic properties while maintaining the original semiconductor optoelectronic properties.Recently, the research team headed by Wei Zhongming and Li Jingbo, supervisors of the Institute of Semiconductors for Semiconductors, Chinese Academy of Sciences, -SnS2) crystals have made new progress in the light, electricity and magnetism research.
Tin sulfide (SnS2) is a two-dimensional van der Waals material with excellent photoelectric properties and is one of the two-dimensional semiconductor materials with the fastest photoelectric response time reported so far.This material is non-toxic, environment-friendly, rich in content and easy to prepare. The research team obtained high-quality Fe-SnS2 single crystals with different doping concentrations by groWing the growth conditions by the conventional chemical vapor transport method and then obtained two-dimensional Fe-SnS2 nanosheets by mechanical stripping method.Search transmission electron microscopy STEM) results show that the Fe atoms are doping at the position of the Sn atoms and evenly distributed.According to the regulation of the growth conditions, combined with X-ray photoelectron spectroscopy (XPS) analysis, a series of different crystal, iron doped The miscellaneous concentrations were 2.1%, 1.5% and 1.1%, respectively. The field-effect transistor test of monolayer Fe0.021Sn0.979S2 showed that the material was n-type, the switching ratio was over 106 and the mobility was 8.15cm2V-1s-1. Degree of 206mAW-1, shows a good optoelectronic properties.
Single-chip magnetic test showed that SnS2 is diamagnetism, Fe0.021Sn0.979S2 and Fe0.015Sn0.985S2 have ferromagnetism, while Fe0.011Sn0.989S2 shows paramagnetism. The experiment measured Fe0.021Sn0.979S2 Curie The temperature is 31 K. When the temperature is 2K, the magnetic field can get different magnetic properties along the vertical c-axis and the parallel c-axis, ie, strong magnetic anisotropy. Theoretical calculations show that the magnetic properties of Fe-SnS2 are derived from Fe atoms and The antiferromagnetic coupling of adjacent S atoms, and the neighboring Fe atoms are ferromagnetically coupled, thus forming a long-range ferromagnetism in such a magnetic atom-doping material. This study shows that iron-doped SnS in the future nano There are potential applications in electronics, magnetism and optoelectronics.
Relevant research results published in Nature Communications research work by the Chinese Academy of Sciences 'Hundred Talents Program' and the National Natural Science Foundation of China outstanding youth science fund, the surface of the project funding.
Advances in magnetic doping of two-dimensional semiconductors by semiconductor Institute of Chinese Academy of Sciences