The GaN Systems GSP65RxxHB-EVB IMS Evaluation Platform, available from Mouser Electronics, includes a GSP65MB-EVB mainboard and two IMS evaluation modules each equipped with the GS66516B Enhanced Mode High Electron Mobility Transistor (E-HEMT) - High power GaN system with a bottom heat sink that operates at 650 V and can be configured in half-bridge mode with 13mΩ 2-4kW and 25mΩ 4-7kW versions. When used with the IMS evaluation module Supports 10 different configurations and 12 additional configurations with the addition of a single motherboard Designers can also use the IMS Evaluation Module with their existing circuit boards as a high-power GaN (GaN) Intelligent Power Module (IPM) In-system prototype development.
This series of evaluation modules have low impedance and have an optimized driver board that reduces both power consumption and gate drive circuit count. Typical applications include on-board chargers, DC / DC converters for electric vehicles and hybrids, and three Phase inverters, industrial PV inverters and motor drives, as well as switching power supplies for server / data centers and residential energy storage systems.
For more information about the GaN Systems IMS Evaluation Platform, visit www.mouser.com/gan-ims-3rd-gen-eval-boards.