STMicroelectronics' (ST) PWD13F60 System-in-Package (SiP) product incorporates a complete 600V / 8A MOSFET full-bridge circuit in a 13mm x 11mm package for industrial motor drive controllers, rectifiers, power supplies, power conversion Device and inverter manufacturers save material costs and board space.
Compared to a full-bridge circuit designed with other discrete components, which can save up to 60% board space, the PWD13F60 also enhances the density of the final application power.Commonly available on the market full-bridge module is a dual FET half-bridge or six FET, but the PWD13F60 combines four power MOSFETs into a high-performance alternative. Unlike other products, a single-phase full-bridge design is achieved with just one PWD13F60, which allows the internal MOSFET components not to be The new full bridge module can be flexibly configured as a full bridge or two half-bridges.
Through STMicroelectronics' high-voltage BCD6s-Offline process, the PWD13F60 combines a power MOSFET gate driver and an upper-arm-driven bootstrap diode with design benefits that simplify board design, simplify assembly, and save external components The gate driver has been optimized and improved for high switching reliability and low EMI (electromagnetic interference). The system also features cross-conduction and under-voltage lock protection to further reduce the footprint , While ensuring system security.
Other features of the PWD13F60 include a wide operating voltage of 6.5V minimum, configuration flexibility, and maximized design simplicity. In addition, the new system package input pins accept 3.3V-15V logic signals to connect the microcontroller MCU), digital signal processor (DSP) or Hall sensor will become very easy.