Not only does the PWD13F60 save up to 60% more board space than a similar full-bridge circuit with discrete device design, but the final power density of the PWD13F60 is also on the market. Full-bridge modules on the market are typically dual FET half-bridges or six FETs, The PWD13F60 integrates four power MOSFETs and is a particularly energy-efficient alternative. Unlike these products, only one PWD13F60 is required to complete a single-phase full-bridge design, leaving none of the internal MOSFETs idle. The module can be flexibly configured as a full bridge or two half-bridges.
Utilizing STMicroelectronics' high-voltage BCD6s-Offline manufacturing process, the PWD13F60 integrates a power MOSFET gate driver and an over-the-top-arm bootstrap diode, which simplifies board design, simplifies assembly and saves external components. Optimized for high switching reliability and low EMI (electromagnetic interference), this system package features cross-conduction and under-voltage lock protection to further reduce footprint and ensure system safety.
Other features of the PWD13F60 include wide operating voltages down to 6.5V, maximum flexibility in configuration flexibility and ease of design, plus 3.3V-15V logic input on the new system package input pins for connection to a microcontroller (MCU) , Digital processor (DSP) or Hall sensor is very easy.
The PWD13F60 is available now with multi-island VFQFPN packages with high thermal efficiency.