Samsung Announces Worldwide Production of 512GB eUFS Flash Memory

Samsung Electronics announced today that it has begun volume production of the industry's first 512GB embedded universal flash memory for the next generation of mobile devices.According to reports, the Samsung 512GB eUFS uses three of Samsung's latest 64-layer 512 Gigabit (Gb) V-NAND chip and a controller chip.

In order to maximize 512GB eUFS performance and energy efficiency, Samsung introduced a new set of exclusive technologies.Samsung 512GB eUFS controller using 64-layer 512GbV-NAND advanced circuit design and new power management technology, the energy consumption down to In addition, the 512GB eUFS controller chip accelerates the mapping of logical block addresses to physical block addresses.

Samsung 512GB eUFS read and write performance is also very powerful. 512GB embedded memory sequential read and write speeds of 860MB / s and 255MB / s, respectively, in 5 seconds to 6GB full HD video clips transmitted to the SSD, compared to ordinary micro SD card speed increased by 8 times.

For random operations, the Samsung 512GB eUFS can read 42,000 IOPS and write 40,000 IOPS. EUFS-based fast random writes are approximately 400 times faster than the 100 IOPS of a traditional micro SD card, giving mobile users a seamless multimedia experience, Such as high-resolution continuous shooting, as well as dual file search and video download application viewing modes.

In addition, Samsung is also planning to steadily increase its production of 64-layer 512Gb V-NAND chips and expand the production of 256Gb V-NAND chips to meet advanced embedded mobile storage and high-density, high-performance advanced solid state drives and removable storage cards The demand.