Android Authority reported that the process continues to shrink, the traditional lithography came to the limit, can not solve the need for more sophisticated exposure imaging, we must use shorter wavelength EUV, to accurately etch the circuit. 5nm process, EUV is an essential tool When Samsung produces 7nm next year, it will take the lead in adopting EUV, which is like giving Samsung a head start in the race below 6nm, which is expected to speed up its development.
In contrast, TSMC and Grosvenor first-generation 7nm process, still use the traditional immersion lithography, the second generation will use EUV.
In addition to embracing the EUV process, FinFET technology successors need to be developed as well. Transistor operation controls whether the current passes through the gate. However, the smaller and smaller the current channel, the narrower the current channel width, the harder to control the current direction. FinFET may not be enough to use, many people think that "Gate-all-around FET (GAAFET) is the best solution.
Earlier this year, Samsung, Googol and IBM partnered to release the world's first 5nm wafer technology using EUV and GAAFET technology. Samsung's roadmap also estimates that FinFETs are hard to use after 5nm and GAAFETs at 4nm. Although wafer generation R & D is not easy, prone to setbacks delay, but now seems the fastest progress in Samsung.The company's outlook shows that the fastest production plan in 2020 4nm, progress beyond the same industry, may be expected to win.