The integrated circuit industry is a national strategic emerging industry in the 13th Five-Year Plan period.Memory is one of the most important technologies in integrated circuits and an important manifestation of the country's core competitiveness.As a global manufacturing base of electronic products, memory self-sufficiency is still relatively Weak. Foreign large-scale semiconductor companies such as Samsung and Intel monopolize memory technologies and products, posing a serious threat to the development of China's information industry and information security. It is imminent to develop a new type of semiconductor memory technology with independent intellectual property rights.
SMIC Shanghai Institute of Microsystem and Information Technology, in conjunction with Semiconductor Manufacturing International Corp., selected Embedded PCRAM as the starting point. At the key state key R & D nanotechnology focus, National Science and Technology Major Project Large-scale integrated circuit manufacturing equipment and complete sets of technology 'special, the National Natural Science Foundation of China, CAS A-type strategic pilot science and technology projects, Shanghai's leading talent, Shanghai Science and Technology Commission and other projects funded by more than ten years of research, storage Material screening, embedded device design, PCRAM basic manufacturing technology made a series of important scientific and technological progress.
Recently, Song Zhitang, a research team of Shanghai Microsystems Co., Ltd., made a major breakthrough in new phase change memory materials. A new design idea for high-speed phase change material was proposed. That is to reduce the randomness of nucleation in amorphous phase change film Variable-material high-speed crystallization.Firstly theoretical calculations and molecular dynamics simulation, from a number of transitional elements, preferred scandium (Sc) as the doping element, designed to create a low-power, long life, high stability Of Sc-Sb-Te material, stable octahedron formed by Sc and Te, becoming the core of the nucleation is the main reason for high-speed, low-power storage with independent intellectual property rights (International Patent PCT / CN2016 / 096649, Chinese patent 201610486617.8) The Sc-Sb-Te based phase change memory device fabricated by 0.13um CMOS process achieves a 700 picosecond high-speed reversible write-erase operation with a cycle life of more than 107. Compared with the conventional Ge-Sb-Te device, the operating power consumption A 90% reduction and a 10-year data retention. By further optimizing material and microfilter dimensions, the Sc-Sb-Te-based PCRAM synthesis performance will be further enhanced.
An important online research paper was published online in the November 10 issue of Science (10.1126 / science.aao3212 (2017)) entitled Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing.
The major discovery of Sc-Sb-Te phase-change memory materials comes from the long-term scientific research accumulated by Shanghai Microsystems' research team in phase change memory. The research team successively developed China's first 8Mb PCRAM test chip and found that the ratio Internationally-produced Ge-Sb-Te newer Ti-Sb-Te autonomously new phase change memory material, the first PCR-based embedded PCRAM product based on the 0.13um CMOS process has received the first 15 million orders; Dual-channel isolated 4F2 high-density diode technology, self-read memory has begun to send samples, the transistor density reached the international advanced level; 40nm node PCRAM test chip unit yield of 99.99% or more, 4Mb, 64Mb uncorrected chip advanced Information system to achieve trial.
The significant discovery of new phase-change memory materials, especially for high-density and high-speed memories, has great value for our country to break through foreign technology barriers and develop memory chips with independent intellectual property rights, Development, information security and strategic needs are of great importance.
New 0.7-nanosecond High Speed Write Operation and Microscopic Crystallization Mechanism of Novel Sc-Sb-Te Phase Change Memory Devices
