Vishay's new 25V N-Channel Power MOSFETs increase power efficiency and power density

Vishay Intertechnology, Inc. today announced the SiRA20DP, the new 25V N-channel TrenchFET® Gen IV power MOSFET that offers the industry's lowest on-resistance of 10V at only 0.58mΩ Vishay SiliconixSiRA20DP, with its lowest gate charge and less than 0.6mΩ on-resistance, minimizes the gate product of the gate charge and on-resistance (FOM), enabling applications to increase efficiency and power density.

Today's MOSFET, in a 6mm x 5mm PowerPAK® SO-8 package, is one of two 25V MOSFETs with a maximum on-resistance of less than 0.6mΩ. The typical gate charge of the SiRA20DP is even lower than its predecessor at 61nC, The FOM is 0.035Ω * nC, 32% lower, while the other 25V N-channel MOSFETs have an on-resistance of 11% or more.

The SiRA20DP's low on-resistance reduces conduction losses and improves system efficiency for higher power density, making it ideal for OR-ring functions in redundant power architectures with low FOM for improved switching performance such as communications And DC / DC conversion in server power, battery switching in battery systems, and load switching from 5V to 12V input power.

This MOSFET is 100% RG and UIS tested, RoHS compliant and halogen free.

SiRA20DP samples are now available, and mass production has been achieved, large orders for the supply cycle of 15 weeks.