China's new memory materials research and development made major breakthroughs

Xinhua News Agency, Shanghai, November 15 - Song Zhitang, a member of the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, recently made a major breakthrough in China-made new memory materials and innovated a new design idea for high-speed phase-change material to break the technical barriers in foreign countries. The results recently published in the "Science" magazine.

Memory is one of the most important technologies in integrated circuits. Whether it can develop memory chips with independent intellectual property rights is a matter of national information security.

At present, the common memory material in the world is "germanium, antimony, tellurium." In recent years, the popularization of consumer electronic products has put forward higher requirements on various performance indexes such as power consumption, life expectancy, size and endurance of memory chips. Scientists are stepping up the manufacturing of memory chips.

Song Zhitang team through first-class theoretical calculations and molecular dynamics simulation, from a number of 'candidate' elements, the preferred 'scandium' as the doping element, the design invented a low power consumption, long life, high stability of the 'scandium antimony telluride 'Material.

Scandium and tellurium elements form a stable octahedron, which is essential for high-speed, low-power storage. "Song Zhitang introduced a new memory based on 'scandium, tellurium,' materials to achieve 700 picoseconds of high-speed storage operations, Recycling life of more than 10 million times.

Further tests show that the new materials of scandium, antimony telluride, have a 90% reduction in operational power consumption and ten-year data retention compared to traditional germanium, antimony and tellurium devices. By further optimizing the size of materials and microforming devices, Scandium, antimony, tellurium, new materials, new domestic integrated memory performance will be further enhanced.

The industry believes that the 'scandium, antimony telluride' made in China and the discovery of new storage materials in high-density, high-speed memory application verification, for our breakthrough in foreign technology barriers, the development of independent intellectual property rights of memory chips of great value to help maintain Information Security of Memory Chip in China.

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