(Mouser Electronics) today supplies MRFX1K80H LDMOS transistors from NXP Semiconductors. MRFX1K80H is one of MRFX's family of radio frequency (RF) MOSFETs using the latest lateral diffusion metal oxide semiconductor (LDMOS) technology. MRFX1K80H The use of LDMOS technology helps to increase the output power of broadband applications while maintaining the appropriate output impedance.
The NXP MRFX1K80H LDMOS transistor can supply 1800W continuous wave at 65V for 1.8 to 470MHz RF applications and provides a 65: 1 voltage standing wave ratio (VSWR) at all phase angles. This device provides 50 Ohm impedance matching, help to shorten the overall development time.
The MRFX1K80H is designed for extended power ranges from 30V to 65V with high breakdown voltage, higher reliability and greater efficiency. System voltage increases, current drops, limits stress on DC power supplies, and reduces magnetic radiation Increasing the output power of the device also helps to reduce the number of merged transistors while simplifying the complexity of the power amplifier and reducing the overall size.
The MRFX1K80H is suitable for linear applications with appropriate deviations to provide integrated electrostatic discharge (ESD) protection to improve the operation of Class C. Amplifiers for MRFX1K80H include industrial, scientific and medical (ISM) applications, as well as broadcast, aerospace and mobile radios equipment.