(B) the photomicrograph and structure of the black phosphorus transistor; and (c) the carrier mobility and the switching ratio of the silver ion modified black phosphorus transistor.
Recently, the Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences Yu Xuefeng team of researchers and Shenzhen University Professor Zhang Han, Wuhan University Professor Liao Lei team in the field of two-dimensional black phosphorus made new progress, through the metal ion modification method to prepare high stability and high performance Black phosphorus transistor. Related results published in the field of materials science "advanced materials." The first author of the paper is Dr. Guo Zhizhong, the first unit is the Chinese Academy of Sciences Shenzhen Advanced Institute.
In recent years, black phosphorus, which has a two-dimensional layered structure like graphene, exhibits excellent electrical and optical properties and is considered a new super-material, which has great potential in the field of transistors, optoelectronic devices, catalysis and biomedicine. However, the instability of black phosphorus limits its in-depth research and application in many fields.To solve this problem of black phosphorus, Yu Xuefeng team has successively based on coordination chemistry and covalent chemistry principle, effectively improve the stability of black phosphorus However, how to maintain and even improve the electrical properties of black phosphorus is a key problem in the field.
In this study, the team invented a method of modifying black phosphorus with metal ions by which metal cations (such as silver ions) that are freely dispersed in a solvent can spontaneously adsorb to the surface of black phosphorus by cation-π interaction, Passivation of phosphorus atoms in the black phosphorus phosphorus atoms, thereby greatly improving the stability of the black phosphorus layer.At the same time, the modification process of metal ions is equivalent to the introduction of more holes in the black phosphorus can be regulated The semiconductor properties of bipolar partial p-type black phosphorus further enhance the transport properties of the hole-conduction side, such as silver ion modification, the carrier mobility of black phosphorus has doubled, the switching ratio increased by two Orders of magnitude.Due to the weaker supramolecular interactions between metal ions and black phosphorus, the modification of black phosphorus by metal ions is more controllable than the chemistry previously developed and more universal, except that silver ions In addition, magnesium ions, iron ions and mercury ions can all enhance the stability of black phosphorus and regulate the characteristics of semiconductors.
This technology provides a simple and effective new method for preparing high-stability, high-performance black phosphorus transistors and greatly expands the application of black phosphorus in various electronic and optoelectronic devices.
This work has been funded by the National Natural Science Foundation of China, CAS Key Project of Frontier Science Research, Shenzhen Peacock Team, and Shenzhen Basic Research Layout.
