IP supplier Li Wang Electronics strongly layout car electronics market, it is proposed that the embedded EEPROM (electronic erase-type readable memory) can be written more than 500,000 times (Silicon IP), to meet the demand of vehicle market, and can be applied to the existing platform without additional light cover. Not only car electronics, can also be used for fingerprint identification, power management IC, NFC, rfic and so on. Livan This proposed can be written more than 500,000 times the embedded EEPROM, is an enhanced version of IP, is also the Livan neoee embedded EEPROM family of the latest products, and this new version of the number of IP is dozens of times times the original, and write/erase (program/erase) The time is reduced by nearly 50%, the data preservation period in the 150°c high temperature operation, may be up to 10 years long. Livan analysis, the new version of the Neoee and the existing logic process and car regulations commonly used BCD (BIPOLAR-CMOS-DMOS) process is fully compatible, without the need to add light cover can be integrated into different types of process platform, and the IP has passed the wafer factory 0.18 micron 5V process platform validation, A Buchan is currently under way to transfer the technology to other 5V platforms. In the application, Livan pointed out that the enhanced version Neoee is very suitable for high writing requirements applications, including fingerprint identification chip, smart card, NFC, RFID, power management IC and Microprocessor (MCU). It is noteworthy that this IP tolerance (endurance), high temperature operation, Life cycle is in accordance with the AEC-Q100 Vehicle standards design, the future will also be the main taxi market. Neoee Silicon Wisdom to the standard 5V MOS process platform for development, easy integration to the automotive electronics commonly used high-pressure (HV) and BCD process platform, from the cost and safety point of view, Neoee most suitable to replace the traditional plug-in eeprom. Generally can write memory after repeated writing, stability will decline, mainly because the repetition of the writing will change the electronic distribution of memory, resulting in the writing and erasure of the signal differences between the more and less obvious, finally can not be resolved. Livan this time, the new IP can be repeated to achieve more than 500,000 times the level of writing, mainly through optimizing the memory cell architecture and the adoption of new write/erase algorithm, to reduce the memory loss caused by repetitive writing. After testing, the enhanced version of the Neoee experience up to 2,500 hours of 150°c high temperature, write and erase the state stability, and no current (pressure) increase or loss of the phenomenon. Furthermore, the NEOEE structure is simple, the number of wipes can be as high as 1,000 to 500,000 times, the maximum capacity of up to 16K bits, operating temperature range of -40~150°c, data preservation period of up to 10 years. Due to the complete compatibility with the existing logic process, the NEOEE eliminates the need for any optical enclosures to be integrated into different types of process platforms, reducing the cost of semiconductor factory imports and saving product development time.
